The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Nov. 09, 2023
United Microelectronics Corp., Hsin-Chu, TW;
Po-Yu Yang, Hsinchu, TW;
Hsun-Wen Wang, Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for forming a high electron mobility transistor includes the steps of providing a substrate, forming a channel layer, a barrier layer, and a first passivation layer sequentially on the substrate, forming a plurality of trenches through at least a portion of the first passivation layer, forming a second passivation layer on the first passivation layer and covering along sidewalls and bottom surfaces of the trenches, and forming a conductive plate structure on the second passivation layer and filling the trenches.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile