The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Apr. 10, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Po-Yu Yang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4234 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract
A semiconductor structure includes a substrate, an insulating layer disposed on the substrate, an active layer disposed on the insulating layer, a plurality of isolation structures in the active layer to define a first device region and a non-device region of the active layer, a first semiconductor device formed on the first device region of the active layer, and a charge trap structure extending through the non-device region of the active layer. In a plane view, the charge trap structure and the non-device region form concentric closed ring surrounding the first device region.