The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Feb. 05, 2024
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Po-Yu Yang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 23/544 (2013.01);
Abstract

A manufacturing method of a semiconductor device includes the following steps. A singulation process is performed to a semiconductor wafer for forming semiconductor dies and includes a first cutting step, a thinning step, and a second cutting step. The first cutting step is configured to form first openings in the semiconductor wafer by etching. A portion of the semiconductor wafer is located between each first opening and a back surface and removed by the thinning step. Each first opening penetrates through the semiconductor wafer after the thinning step. The second cutting step is configured to form second openings. Each second opening penetrates through the semiconductor wafer for separating the semiconductor dies. A semiconductor die includes two first side surfaces opposite to each other and two second side surfaces opposite to each other. A roughness of each first side surface is different from a roughness of each second side surface.


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