Company Filing History:

6 out of 3,387

Northrop Grumman Systems Corporation

patents

5 out of 28

Northrop Grumman Space & Mission Systems Corporation

Years Active: 1993-2017

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9583589 - Self-aligned double gate recess for semiconductor field effect transistors (2017-02-28),

2. 9048184 - Method of forming a gate contact (2015-06-02),

3. 7897446 - Method of forming a high electron mobility transistor hemt, utilizing self-aligned miniature field mitigating plate and protective dielectric layer (2011-03-01),

4. 7800766 - Method and apparatus for detecting and adjusting substrate height (2010-09-21),

5. 7800132 - High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof (2010-09-21),

6. 7750370 - High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer (2010-07-06),

7. 7709860 - High electron mobility transistor semiconductor device and fabrication method thereof (2010-05-04),

8. 7608865 - Club extension to a T-gate high electron mobility transistor (2009-10-27),

9. 7582518 - High electron mobility transistor semiconductor device and fabrication method thereof (2009-09-01),

10. 7411226 - High electron mobility transistor (HEMT) structure with refractory gate metal (2008-08-12),

11. 6569763 - Method to separate a metal film from an insulating film in a semiconductor device using adhesive tape (2003-05-27),

12. 5262660 - High power pseudomorphic gallium arsenide high electron mobility (1993-11-16),

Title: Po-Hsin Liu: Innovator in Semiconductor Technology

Introduction

Po-Hsin Liu is a prominent inventor based in Anaheim, CA, known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, Liu has made remarkable advancements in the field of field effect transistors and compound semiconductor devices.

Latest Patents

Among his latest patents, Liu has developed a method for fabricating a self-aligned double gate recess for semiconductor field effect transistors. This innovative method involves providing a semiconductor wafer with multiple layers and depositing an EBL resist layer. The process includes patterning the resist layer, performing wet and dry etches, and ultimately forming a gate terminal. Another notable patent focuses on forming a gate contact for a compound semiconductor device. This method allows for tunability in the size of the wing contact portion while maintaining the operational frequency of the device, thereby enhancing performance.

Career Highlights

Liu has had a distinguished career, working with leading organizations such as Northrop Grumman Systems Corporation and Northrop Grumman Space & Mission Systems Corporation. His work in these companies has contributed to advancements in aerospace and defense technologies.

Collaborations

Throughout his career, Liu has collaborated with talented professionals, including Ioulia Smorchkova and Carol Osaka Namba. These collaborations have fostered innovation and development in semiconductor technologies.

Conclusion

Po-Hsin Liu's contributions to semiconductor technology through his patents and career achievements highlight his role as a key innovator in the field. His work continues to influence advancements in electronic devices and systems.

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