The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Apr. 27, 2005
Yeong-chang Choug, Irvine, CA (US);
Ronald Grundbacher, Manhattan Beach, CA (US);
Po-hsin Liu, Anaheim, CA (US);
Denise L. Leung, Manhattan Beach, CA (US);
Richard Lai, Redondo Beach, CA (US);
Yeong-Chang Choug, Irvine, CA (US);
Ronald Grundbacher, Manhattan Beach, CA (US);
Po-Hsin Liu, Anaheim, CA (US);
Denise L. Leung, Manhattan Beach, CA (US);
Richard Lai, Redondo Beach, CA (US);
Northrop Grumman Corporation, Los Angeles, CA (US);
Abstract
An InP high electron mobility transistor (HEMT) structure in which a gate metal stack includes an additional thin layer of a refractory metal, such as molybdenum (Mo) or platinum (Pt) at a junction between the gate metal stack and a Schottky barrier layer in the HEMT structure. The refractory metal layer reduces or eliminates long-term degradation of the Schottky junction between the gate metal and the barrier layer, thereby dramatically improving long-term reliability of InP HEMTs, but without sacrifice in HEMT performance, whether used as a discrete device or in an integrated circuit.