Denise L Leung

Title: The Innovative Contributions of Denise L. Leung

Introduction

Denise L. Leung is a prominent inventor based in Manhattan Beach, CA. She has made significant contributions to the field of electronics, particularly in the development of high electron mobility transistors (HEMTs). Her work has implications for improving the reliability and performance of electronic devices.

Latest Patents

Denise holds a patent for a "High electron mobility transistor (HEMT) structure with refractory gate metal." This invention involves an InP HEMT structure that incorporates a gate metal stack with an additional thin layer of a refractory metal, such as molybdenum (Mo) or platinum (Pt). This innovative design reduces or eliminates long-term degradation of the Schottky junction, thereby enhancing the long-term reliability of InP HEMTs without compromising performance. She has 1 patent to her name.

Career Highlights

Denise is currently employed at Northrop Grumman Systems Corporation, where she continues to push the boundaries of technology in her field. Her expertise in semiconductor technology has made her a valuable asset to her team and the company.

Collaborations

Throughout her career, Denise has collaborated with notable colleagues, including Yeong-Chang Choug and Ronald Grundbacher. These partnerships have fostered innovation and contributed to the advancement of their projects.

Conclusion

Denise L. Leung's contributions to the field of electronics, particularly through her patented HEMT structure, highlight her role as an influential inventor. Her work not only enhances device performance but also ensures long-term reliability in electronic applications.