The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Mar. 15, 2013
Carol O. Namba, Walnut, CA (US);
Po-hsin Liu, Anaheim, CA (US);
Sumiko Poust, Hawthorne, CA (US);
Ioulia Smorchkova, Lakewood, CA (US);
Michael Wojtowicz, Long Beach, CA (US);
Ronald Grundbacher, Oberrieden, CH;
Carol O. Namba, Walnut, CA (US);
Po-Hsin Liu, Anaheim, CA (US);
Sumiko Poust, Hawthorne, CA (US);
Ioulia Smorchkova, Lakewood, CA (US);
Michael Wojtowicz, Long Beach, CA (US);
Ronald Grundbacher, Oberrieden, CH;
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
A method is provided for forming a gate contact for a compound semiconductor device. The gate contact is formed from a gate contact portion and a top or wing contact portion. The method allows for the tunablity of the size of the wing contact portion, while retaining the size of the gate contact portion based on a desired operational frequency. This is accomplished by providing for one or more additional conductive material processes on the wing contact portion to increase the cross-sectional area of the wing contact portion reducing the gate resistance, while maintaing the length of the gate contact portion to maintain the operating frequency of the device.