The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Oct. 25, 2007
Applicants:
Ioulia Smorchkova, Lakewood, CA (US);
Carol Namba, Walnut, CA (US);
Po-hsin Liu, Anaheim, CA (US);
Robert Coffie, Camarillo, CA (US);
Roger Tsai, Torrance, CA (US);
Inventors:
Ioulia Smorchkova, Lakewood, CA (US);
Carol Namba, Walnut, CA (US);
Po-Hsin Liu, Anaheim, CA (US);
Robert Coffie, Camarillo, CA (US);
Roger Tsai, Torrance, CA (US);
Assignee:
Northrop Grumman Systems Corporation, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a T-gate disposed between drain and source regions and above a barrier layer to form a Schottky contact to the channel layer. A first inactive field mitigating plate is disposed above a portion of the T-gate and a second active field plate is disposed above the barrier layer and in a vicinity of the T-gate.