Company Filing History:

9 out of 3,381

Northrop Grumman Systems Corporation

Years Active: 2002-2018

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10153273 - Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor (HEMT) based device and method of making the same (2018-12-11),

2. 9793353 - Multiple layer quantum well FET with a side-gate (2017-10-17),

3. 9793350 - Multiple layer side-gate FET switch (2017-10-17),

4. 9425110 - Yield enhancing vertical redundancy method for 3D wafer level packaged (WLP) integrated circuit systems (2016-08-23),

5. 7800132 - High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof (2010-09-21),

6. 7135411 - Method for etching mesa isolation in antimony-based compound semiconductor structures (2006-11-14),

7. 6772400 - Semi-physical modeling of HEMT high frequency small signal equivalent circuit models (2004-08-03),

8. 6711723 - Hybrid semi-physical and data fitting HEMT modeling approach for large signal and non-linear microwave/millimeter wave circuit CAD (2004-03-23),

9. 6573744 - S-parameter microscopy for semiconductor devices (2003-06-03),

10. 6524899 - Process for forming a large area, high gate current HEMT diode (2003-02-25),

11. 6503774 - Embedding parasitic model for pi-fet layouts (2003-01-07),

12. 6396679 - Single-layer dielectric structure with rounded corners, and circuits including such structures (2002-05-28),

Title: Innovations of Roger S. Tsai in Semiconductor Technology

Introduction

Roger S. Tsai is a prominent inventor based in Torrance, California, known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, Tsai has made remarkable advancements in the field, particularly in the development of field effect transistors.

Latest Patents

Among his latest patents are the Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor (HEMT) based device and method of making the same. This innovative semiconductor device features a base structure with multiple channel layers and ohmic contacts, enhancing its performance and efficiency. Another notable invention is the multiple layer side-gate FET switch, which includes a unique design of stacked layer groups and a continuous conductive side gate, significantly improving the figure of merit for the FET as the number of layer groups increases.

Career Highlights

Roger S. Tsai has worked with leading companies in the industry, including Northrop Grumman Systems Corporation and TRW Limited. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking technologies in semiconductor devices.

Collaborations

Throughout his career, Tsai has collaborated with notable professionals in the field, including Weidong Liu and Ronald W. Grundbacher. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Roger S. Tsai's work in semiconductor technology exemplifies the spirit of innovation and dedication to advancing the field. His contributions continue to influence the industry and inspire future developments in electronics.

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For the Inventor, By the Inventor

Roger S Tsai

Company Filing History:

Years Active: 2002-2018