The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Aug. 12, 2004
Applicants:
Peter S. Nam, Cerritos, CA (US);
Michael D. Lange, Anaheim, CA (US);
Roger S. Tsai, Torrance, CA (US);
Inventors:
Peter S. Nam, Cerritos, CA (US);
Michael D. Lange, Anaheim, CA (US);
Roger S. Tsai, Torrance, CA (US);
Assignee:
Northrop Grumman Corporation, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract
Antimony-based semiconductor devices are formed over a substrate structure () that includes an antimony-based buffer layer () and an antimony-based buffer cap (). Multiple epitaxial layers () formed over the substrate structure () are dry etched to form device mesas () and the buffer cap () provides a desirably smooth mesa floor and electrical isolation around the mesas.