The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Apr. 28, 2008
Carol Osaka Namba, Walnut, CA (US);
Po-hsin Liu, Anaheim, CA (US);
Ioulia Smorchkova, Lakewood, CA (US);
Michael Wojtowicz, Long Beach, CA (US);
Robert Coffie, Camarillo, CA (US);
Yaochung Chen, Rancho Palos Verdes, CA (US);
Carol Osaka Namba, Walnut, CA (US);
Po-Hsin Liu, Anaheim, CA (US);
Ioulia Smorchkova, Lakewood, CA (US);
Michael Wojtowicz, Long Beach, CA (US);
Robert Coffie, Camarillo, CA (US);
Yaochung Chen, Rancho Palos Verdes, CA (US);
Northrop Grumman Space & Mission Systems Corp., Los Angeles, CA (US);
Abstract
A method of fabricating a T-gate HEMT with a club extension comprising the steps of: providing a substrate; providing a bi-layer resist on the substrate; exposing an area of the bi-layer resist to electron beam lithography where the area corresponds to a T-gate opening; exposing an area of the bi-layer resist to electron beam lithography where the area corresponds to the shape of the club extension wherein the area corresponding to the club extension is approximately 1 micron to an ohmic source side of a T-gate and approximately 0.5 microns forward from a front of the T-gate; developing out the bi-layer resist in the exposed area that corresponds to the T-gate opening; developing out the bi-layer resist in the exposed area that corresponds to the club extension; and forming the T-gate and club extension through a metallization process.