The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Mar. 25, 2010
Ioulia Smorchkova, Lakewood, CA (US);
Robert Coffie, Camarillo, CA (US);
Ben Heying, Fullerton, CA (US);
Carol Namba, Walnut, CA (US);
Po-hsin Liu, Anaheim, CA (US);
Boris Hikin, Los Angeles, CA (US);
Ioulia Smorchkova, Lakewood, CA (US);
Robert Coffie, Camarillo, CA (US);
Ben Heying, Fullerton, CA (US);
Carol Namba, Walnut, CA (US);
Po-Hsin Liu, Anaheim, CA (US);
Boris Hikin, Los Angeles, CA (US);
Northrop Grumman Systems Corporation, Los Angeles, CA (US);
Abstract
A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.