Tainan, Taiwan

Po-Hsiang Huang

This inventor holds 132 USPTO granted patents and 39 published patent applications, primarily in Semiconductor Packaging (CPC class G06F30-398). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., National Yang Ming Chiao Tung University, Hewlett-Packard Development Company, L.p.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Po-Hsiang Huang. Retrieved from https://idiyas.com/inventor/po-hsiang-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 132 

% Patents Active = 98.5

Average Co-Inventor Count = 5.7

ph-index = 6

Forward Citations = 217(Granted Patents)

Forward Citations (Not Self Cited) = 162(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Hsinchu Science Park, TW (2022)
  • Tainan, TW (2013 - 2024)
  • Hsin-Chu, TW (2014 - 2024)
  • Taipei, TW (2014 - 2024)
  • Hsinchu, TW (2024)

Company Filing History:


Years Active: 2013-2026

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Areas of Expertise:
Interconnect Structure
Thermal Management
Semiconductor Device
3D Integrated Circuits
Capacitance Reduction
Layout Design
Heat Dissipation
Fin Structure
Info Packages
Encapsulant
E-Fuse
Barrier Interface
132 patents (USPTO):Explore Patents

Title: Po-Hsiang Huang: A Pioneer in Semiconductor Innovations

Introduction

Po-Hsiang Huang, based in Tainan, Taiwan, is a renowned inventor with an impressive portfolio of 112 patents. His contributions to the field of semiconductor technology have significantly advanced manufacturing processes and design methodologies. Huang's innovative spirit is reflected in his latest patents, which showcase his expertise in creating efficient and effective technological solutions.

Latest Patents

Among his recent inventions is a patent for a method and system for generating layout diagrams including wiring arrangements. This method involves generating a layout diagram for wire routing arrangements in a multi-patterning context using multiple masks. Key processes within this method include placing a cut pattern relative to the masks and determining the viability of the placement based on design rule compliance.

Another groundbreaking patent focuses on a semiconductor package featuring an encapsulant that includes conductive fillers. This invention addresses the need for high-thermal conductivity in molding compounds and comprises a first redistribution structure that is electrically coupled with several crucial components. The encapsulant surrounding these components is designed to optimize thermal performance, demonstrating Huang's commitment to enhancing semiconductor device efficiency.

Career Highlights

Throughout his career, Po-Hsiang Huang has played pivotal roles in notable organizations. His professional journey includes significant contributions at Taiwan Semiconductor Manufacturing Company Limited, where he has honed his skills in semiconductor technology. Additionally, Huang has been associated with National Chiao Tung University, where he likely engaged in both academic and practical research, further contributing to advancements in the field.

Collaborations

Huang has collaborated with several prominent professionals in his field, including Fong-yuan Chang and Sheng-Hsiung Chen. These partnerships have fostered innovation and have played a crucial role in the successful development of his patented technologies.

Conclusion

Po-Hsiang Huang's innovative contributions and extensive patent portfolio underscore his role as a leader in semiconductor technology. Through his latest inventions, collaborations, and career achievements, Huang continues to push the boundaries of what is possible in the realm of electronics and semiconductor manufacturing. His work exemplifies the spirit of innovation that drives progress across industries.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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