The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
May. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Fong-Yuan Chang, Hsinchu County, TW;
Ching-Yi Lin, Zhubei, TW;
PO-Hsiang Huang, Tainan, TW;
Ho Che Yu, Zhubei, TW;
Jyh Chwen Frank Lee, Palo Alto, CA (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first substrate. The semiconductor device includes a plurality of metallization layers formed over the first substrate. The semiconductor device includes a plurality of via structures formed over the plurality of metallization layers. The semiconductor device includes a second substrate attached to the first substrate through the plurality of via structures. The semiconductor device includes a first conductive line disposed in a first one of the plurality of metallization layers. The first conductive line, extending along a first lateral direction, is connected to at least a first one of the plurality of via structures that is in electrical contact with a first through via structure of the second substrate, and to at least a second one of the plurality of via structures that is laterally offset from the first through via structure.