The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

May. 28, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Cheng-Yu Lin, Hsinchu, TW;

Po-Hsiang Huang, Tainan, TW;

Pochun Wang, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Fong-Yuan Chang, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H10D 88/00 (2025.01); H10D 89/10 (2025.01); H10D 84/01 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 89/10 (2025.01); H10D 88/00 (2025.01); H10D 84/0191 (2025.01); H10D 84/038 (2025.01); H10D 84/854 (2025.01);
Abstract

A semiconductor device and a method for manufacturing a semiconductor device are provided. The semiconductor device comprises a substrate, a conductive element disposed within a first region of the substrate, and a first transistor disposed within a second region adjacent to the first region of the substrate. The conductive element is electrically connected to an electrode of the first transistor, and the conductive element penetrates the substrate and is configured to receive a supply voltage.


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