The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jul. 29, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method according to the present disclosure includes receiving a workpiece that includes a first source/drain feature, a first dielectric layer over the first source/drain feature, and a source/drain contact disposed in the first dielectric layer and over the first source/drain feature. The method further includes depositing a second dielectric layer over the source/drain contact and the first dielectric layer, forming a source/drain contact via opening through the second dielectric layer to expose the source/drain contact, depositing a sacrificial plug in the source/drain contact via opening, depositing a third dielectric layer over the second dielectric layer and the sacrificial plug, forming a trench in the third dielectric layer to expose the sacrificial plug, removing the sacrificial plug to expose the source/drain contact via opening, and after the removing of the sacrificial plug, forming an integrated conductive feature into the trench and the exposed source/drain contact via opening.