Company Filing History:

38 out of 164,108

International Business Machines Corporation

patents

1 out of 14,705

Infineon Technologies Ag

patents

where one patent can have more than one assignee

Years Active: 1993-2012

where 'Filed Patents' based on already Granted Patents

38 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8227792 - Relaxed low-defect SGOI for strained SI CMOS applications (2012-07-24),

2. 7993990 - Multiple crystallographic orientation semiconductor structures (2011-08-09),

3. 7696573 - Multiple crystallographic orientation semiconductor structures (2010-04-13),

4. 7683434 - Preventing cavitation in high aspect ratio dielectric regions of semiconductor device (2010-03-23),

5. 7459384 - Preventing cavitation in high aspect ratio dielectric regions of semiconductor device (2008-12-02),

6. 7361556 - Method of fabricating semiconductor side wall fin (2008-04-22),

7. 7358166 - Relaxed, low-defect SGOI for strained Si CMOS applications (2008-04-15),

8. 7265417 - Method of fabricating semiconductor side wall fin (2007-09-04),

9. 7163864 - Method of fabricating semiconductor side wall fin (2007-01-16),

10. 7112845 - Double gate trench transistor (2006-09-26),

11. 7081676 - Structure for controlling the interface roughness of cobalt disilicide (2006-07-25),

12. 6946373 - Relaxed, low-defect SGOI for strained Si CMOS applications (2005-09-20),

13. 6916729 - Salicide formation method (2005-07-12),

14. 6891228 - CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture (2005-05-10),

15. 6828630 - CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture (2004-12-07),

Title: The Legacy of Paul David Agnello: A Trailblazer in Invention

Introduction

Paul David Agnello, a revered inventor based in Wappingers Falls, NY (US), has etched his name in the annals of innovation with a remarkable portfolio of 38 patents. His groundbreaking work continues to serve as a guiding light for aspiring inventors worldwide.

Latest Patents

A glimpse into Agnello's latest patents reveals his expertise in cutting-edge technologies. One such patent, "Relaxed low-defect SGOI for strained SI CMOS applications," showcases his mastery in thermal mixing methods for creating a relaxed and low-defect SGOI substrate material. This innovation highlights Agnello's commitment to pushing the boundaries of semiconductor applications.

Another patent, "Multiple crystallographic orientation semiconductor structures," underscores Agnello's proficiency in developing semiconductor structures with varying crystallographic orientations to cater to diverse device requirements. This patent exemplifies his adeptness in bridging the gap between performance-sensitive logic devices and yield-sensitive memory devices.

Career Highlights

Throughout his illustrious career, Agnello has lent his expertise to renowned companies such as IBM and Infineon Technologies Ag. His tenure at these esteemed organizations has been marked by a relentless pursuit of innovation, leading to the development of cutting-edge technologies that have redefined the industry landscape.

Collaborations

Agnello's collaborative spirit is evident through his partnerships with industry stalwarts like Cyril Cabral, Jr. and Arne Watson Ballantine. Together, they have worked tirelessly to bring forth groundbreaking inventions that have left an indelible mark on the realm of technology.

Conclusion

In conclusion, Paul David Agnello stands as a beacon of creativity and ingenuity in the world of inventors. His legacy serves as a testament to the power of innovation and collaboration in driving progress and inspiring future generations of innovators to push the boundaries of what is possible.

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