The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2006
Filed:
Oct. 22, 2003
Paul David Agnello, Wappingers Falls, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Roy Arthur Carruthers, Stormville, NY (US);
James Mckell Edwin Harper, Yorktown Heights, NY (US);
Christian Lavoie, Ossining, NY (US);
Kirk David Peterson, Essex Junction, VT (US);
Robert Joseph Purtell, Mohegan Lake, NY (US);
Ronnen Andrew Roy, Ossining, NY (US);
Jean Louise Jordan-sweet, Shoreham, NY (US);
Yun Yu Wang, Poughquag, NY (US);
Paul David Agnello, Wappingers Falls, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Roy Arthur Carruthers, Stormville, NY (US);
James McKell Edwin Harper, Yorktown Heights, NY (US);
Christian Lavoie, Ossining, NY (US);
Kirk David Peterson, Essex Junction, VT (US);
Robert Joseph Purtell, Mohegan Lake, NY (US);
Ronnen Andrew Roy, Ossining, NY (US);
Jean Louise Jordan-Sweet, Shoreham, NY (US);
Yun Yu Wang, Poughquag, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additive, over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSilayer in said structure.