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For the Inventor, By the Inventor

Ossining, NY, United States of America

Ronnen Andrew Roy

USPTO Granted Patents = 29

Average Co-Inventor Count = 5.0

ph-index = 13

Forward Citations = 429(Granted Patents)


Location History:

  • Briarcliff Manor, NY (US) (1993 - 2001)
  • Ossinging, NY (US) (2002)
  • Ossining, NY (US) (2000 - 2007)

Company Filing History:

goldMedal29 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1993-2007

where 'Filed Patents' based on already Granted Patents

29 patents (USPTO):
1. 7259049 - Self-aligned isolation double-gate FET (2007-08-21),
2. 7102234 - Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy (2006-09-05),
3. 7081676 - Structure for controlling the interface roughness of cobalt disilicide (2006-07-25),
4. 7074684 - Elevated source drain disposable spacer CMOS (2006-07-11),
5. 6987050 - Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow junctions (2006-01-17),
6. 6972250 - Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device (2005-12-06),
7. 6946696 - Self-aligned isolation double-gate FET (2005-09-20),
8. 6809030 - Method and structure for controlling the interface roughness of cobalt disilicide (2004-10-26),
9. 6777298 - Elevated source drain disposable spacer CMOS (2004-08-17),
10. 6753606 - Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy (2004-06-22),
11. 6727135 - All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS (2004-04-27),
12. 6716708 - Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby (2004-04-06),
13. 6690072 - Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device (2004-02-10),
14. 6614079 - All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS (2003-09-02),
15. 6555880 - Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby (2003-04-29),

Title: Innovations and Achievements of Ronnen Andrew Roy

Introduction: Ronnen Andrew Roy, based in Ossining, NY, is a prolific inventor with a remarkable portfolio of 29 patents. His work primarily focuses on advancements in semiconductor technologies, contributing significantly to the field through innovative designs and methodologies.

Latest Patents: Roy's latest patents include a groundbreaking development titled "Self-aligned isolation double-gate FET." This patent introduces a double-gate field effect transistor (DGFET) structure that significantly reduces parasitic capacitance under the source and drain regions. The patent describes methods such as converting the silicon area outside the gate to oxide while protecting a silicon ledge adjacent to the gate with a first spacer. By employing lateral selective epi overgrowth, the invention achieves low-capacitance to the back-plane while maintaining control over threshold voltages.

Another notable patent is focused on the "Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy." This innovative method reduces contact resistance to p+ or n+ silicon areas by forming a metal germanium layer over a silicon-containing substrate. The patent delineates the process, including annealing techniques that convert the metal germanium into a non-etchable metal silicide layer. These advancements streamline fabrication processes in semiconductor technology.

Career Highlights: Ronnen Andrew Roy has made significant contributions through his tenure at International Business Machines Corporation (IBM). His expertise and inventive spirit have propelled his career forward, showcasing his dedication to the evolution of semiconductor devices.

Collaborations: Roy has collaborated with notable colleagues, including Cyril Cabral, Jr and Christian Lavoie, enhancing the innovation landscape at IBM. Their teamwork exemplifies the synergy of talent in driving forward groundbreaking advancements in technology.

Conclusion: With 29 patents to his name, Ronnen Andrew Roy stands out as a significant figure in the realm of semiconductor technology. His innovative solutions have not only revolutionized components within the industry but also paved the way for future advancements. His ongoing collaboration within IBM promises continued progress and innovation in the field.

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