The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Jun. 07, 2001
Applicant:
Inventors:
Cyril Cabral, Jr., Ossining, NY (US);
Kevin Kok Chan, Staten Island, NY (US);
Guy Moshe Cohen, Mohegan Lake, NY (US);
Kathryn Wilder Guarini, Yorktown Heights, NY (US);
Christian Lavoie, Ossining, NY (US);
Ronnen Andrew Roy, Ossining, NY (US);
Paul Michael Solomon, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 3/1119 ;
Abstract
A semiconductor structure includes raised source and drain regions, where the raised source and drain regions are facet free and unconstrained to have a shape conforming to a same crystallographic axes with respect to each other.
Quick Actions:
Cabral, Jr., Cyril. (2003). Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby (U.S. Patent No. 6555880). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6555880
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile