The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Jul. 11, 2001
Cyril Cabral, Jr., Ossining, NY (US);
Kevin Kok Chan, Staten Island, NY (US);
Guy Moshe Cohen, Mohegan Lake, NY (US);
Christian Lavoie, Ossining, NY (US);
Ronnen Andrew Roy, Ossining, NY (US);
Paul Michael Solomon, Yorktown Heights, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Kevin Kok Chan, Staten Island, NY (US);
Guy Moshe Cohen, Mohegan Lake, NY (US);
Christian Lavoie, Ossining, NY (US);
Ronnen Andrew Roy, Ossining, NY (US);
Paul Michael Solomon, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method (and resulting structure) for fabricating a silicide for a semiconductor device, includes depositing a metal or an alloy thereof on a silicon substrate, reacting the metal or the alloy to form a first silicide phase, etching any unreacted metal, depositing a silicon cap layer over the first silicide phase, reacting the silicon cap layer to form a second silicide phase, for the semiconductor device, and etching any unreacted silicon. The substrate can be either a silicon-on-insulator (SOI) substrate or a bulk silicon substrate.