The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Jun. 18, 2003
Kam Leung Lee, New York, NY (US);
Ronnen Andrew Roy, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A complementary metal oxide semiconductor (CMOS) device having silicide contacts that are self-aligned to deep junction edges formed within a surface of a semiconductor substrate as well as a method of manufacturing the same are disclosed. Specifically, the CMOS device includes a plurality of patterned gate stack regions formed on a surface of a semiconductor substrate. Each plurality of patterned gate stack regions includes an L-shaped nitride spacer formed on exposed vertical sidewalls thereof, the L-shaped nitride spacer having a vertical element and a horizontal element, wherein the horizontal element is formed on a portion of the substrate that abuts each patterned gate stack region. Silicide contacts are located on other portions of the semiconductor substrate between adjacent patterned gate stack regions not containing the horizontal element of the L-shaped nitride spacer.