The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Apr. 22, 2003
Cyril Cabral, Jr., Ossining, NY (US);
Roy A. Carruthers, Stromville, NY (US);
Kevin K. Chan, State Island, NY (US);
Jack O. Chu, Manhasset Hill, NY (US);
Guy Moshe Cohen, Mohegan Lake, NY (US);
Steven J. Koester, Ossining, NY (US);
Christian Lavoie, Ossining, NY (US);
Ronnen A. Roy, Ossining, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Roy A. Carruthers, Stromville, NY (US);
Kevin K. Chan, State Island, NY (US);
Jack O. Chu, Manhasset Hill, NY (US);
Guy Moshe Cohen, Mohegan Lake, NY (US);
Steven J. Koester, Ossining, NY (US);
Christian Lavoie, Ossining, NY (US);
Ronnen A. Roy, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method (and structure) of forming a vertically-self-aligned silicide contact to an underlying SiGe layer, includes forming a layer of silicon of a first predetermined thickness on the SiGe layer and forming a layer of metal on the silicon layer, where the metal layer has a second predetermined thickness. A thermal annealing process at a predetermined temperature then forms a silicide of the silicon and metal, where the predetermined temperature is chosen to substantially preclude penetration of the silicide into the underlying SiGe layer.