The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Aug. 19, 2005
Paul D. Agnello, Wappingers Falls, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Robert H. Dennard, New Rochelle, NY (US);
Anthony G. Domenicucci, New Paltz, NY (US);
Keith E. Fogel, Mohegan Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Paul D. Agnello, Wappingers Falls, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Robert H. Dennard, New Rochelle, NY (US);
Anthony G. Domenicucci, New Paltz, NY (US);
Keith E. Fogel, Mohegan Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Thermal mixing methods of forming a substantially relaxed and low-defect SGOI substrate material are provided. The methods include a patterning step which is used to form a structure containing at least SiGe islands formed atop a Ge resistant diffusion barrier layer. Patterning of the SiGe layer into islands changes the local forces acting at each of the island edges in such a way so that the relaxation force is greater than the forces that oppose relaxation. The absence of restoring forces at the edges of the patterned layers allows the final SiGe film to relax further than it would if the film was continuous.