The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Jun. 28, 2004
Paul D. Agnello, Wappingers Falls, NY (US);
Rajeev Malik, Pleasantville, NY (US);
K. Paul Muller, Wappingers Falls, NY (US);
Paul D. Agnello, Wappingers Falls, NY (US);
Rajeev Malik, Pleasantville, NY (US);
K. Paul Muller, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for preventing cavitation in high aspect ratio dielectric regions in a semiconductor device, and the device so formed, are disclosed. The invention includes depositing a first dielectric in the high aspect ratio dielectric region between a pair of structures, and then removing the first dielectric to form a bearing surface adjacent each structure. The bearing surface prevents cavitation of the interlayer dielectric that subsequently fills the high aspect ratio region.