Paul A Ingersoll

Title: Paul A. Ingersoll: Innovator in Non-Volatile Memory Technology

Introduction

Paul A. Ingersoll is a prominent inventor based in Austin, TX, known for his significant contributions to the field of non-volatile memory technology. With a total of 16 patents to his name, Ingersoll has made a lasting impact on the electronics industry through his innovative designs and methods.

Latest Patents

Among his latest patents is a groundbreaking method for forming a first inter-layer dielectric (ILD0) stack that includes a protective gettering layer with a substantially uniform thickness. This invention involves the deposition of a gap fill dielectric layer of SATEOS over an etch stop layer of PEN ESL, followed by the sequential deposition of a gettering layer of BPTEOS and a capping dielectric layer. Additionally, he has developed an electronic device that incorporates memory cells connected to gate lines and bit lines, allowing for efficient orientation and connection of memory cells.

Career Highlights

Ingersoll has had a distinguished career, working with leading companies such as Freescale Semiconductor, Inc. and Motorola Corporation. His work has been instrumental in advancing memory technology, making him a respected figure in the industry.

Collaborations

Throughout his career, Ingersoll has collaborated with notable colleagues, including Gowrishankar L. Chindalore and Craig T. Swift. These partnerships have contributed to the development of innovative solutions in the field of electronics.

Conclusion

Paul A. Ingersoll's contributions to non-volatile memory technology and his extensive patent portfolio highlight his role as a key innovator in the electronics industry. His work continues to influence advancements in memory technology and electronic devices.