The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Oct. 09, 2002
Alexander B. Hoefler, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Paul A. Ingersoll, Austin, TX (US);
Craig T. Swift, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A memory device ( ) that uses a non-volatile storage element ( ), such as nitride, has reduced read disturb, which is the problem of tending to increase the threshold voltage of a memory device ( ) during a read. To reduce this effect, the memory device ( ) uses a counterdoped channel ( ) to lower the natural threshold voltage of the device ( ). This counterdoping can even be of sufficient dosage to reverse the conductivity type of the channel ( ) and causing a negative natural threshold voltage. This allows for a lower gate voltage during read to reduce the adverse effect of performing a read. An anti-punch through (ATP) region ( ) below the channel ( ) allows for the lightly doped or reversed conductivity type channel ( ) to avoid short channel leakage. A halo implant ( ) on the drain side ( ) assists in hot carrier injection (HCI) so that the HCI is effective even though the channel ( ) is lightly doped or of reversed conductivity type.