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For the Inventor, By the Inventor

Austin, TX, United States of America

Craig T Swift

This inventor holds 50 USPTO granted patents, primarily in Non-Volatile Memory (CPC class H01L). Top assignees: Freescale Semiconductor,inc., Motorola Corporation, Nxp USA, Inc.. Active years: 1997-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Craig T Swift. Retrieved from https://idiyas.com/inventor/craig-t-swift

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 50

% Patents Active = 68.0

Average Co-Inventor Count = 2.8

ph-index = 12

Forward Citations = 496(Granted Patents)

Forward Citations (Not Self Cited) = 472(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal39 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
silverMedal9 out of 20,290 
 
Motorola Corporation
 patents
bronzeMedal2 out of 2,854 
 
Nxp USA, Inc.
 patents

Years Active: 1997-2018

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Areas of Expertise:
Non-Volatile Memory
Split-Gate Cells
Endurance Control
Charge Storage
Floating Gate
Memory Arrays
Polysilicon Strap
Thin Film Storage
Discontinuous Storage
Programming Methods
Erasing Structures
FinFET Technology
50 patents (USPTO):Explore Patents
1. 10109356 - Method and apparatus for stressing a non-volatile memory (2018-10-23),
2. 9728410 - Split-gate non-volatile memory (NVM) cell and method therefor (2017-08-08),
3. 9508397 - Non-volatile memory (NVM) with endurance control (2016-11-29),
4. 9425055 - Split gate memory cell with a layer of nanocrystals with improved erase performance (2016-08-23),
5. 9419088 - Low resistance polysilicon strap (2016-08-16),
6. 9293207 - Embedded data and code non-volatile memory cell configurations (2016-03-22),
7. 9236498 - Low resistance polysilicon strap (2016-01-12),
8. 9136360 - Methods and structures for charge storage isolation in split-gate memory arrays (2015-09-15),
9. 9105748 - Integration of a non-volatile memory (NVM) cell and a logic transistor and method therefor (2015-08-11),
10. 8435898 - First inter-layer dielectric stack for non-volatile memory (2013-05-07),
11. 7842573 - Virtual ground memory array and method therefor (2010-11-30),
12. 7745870 - Programming and erasing structure for a floating gate memory cell and method of making (2010-06-29),
13. 7679125 - Back-gated semiconductor device with a storage layer and methods for forming thereof (2010-03-16),
14. 7619275 - Process for forming an electronic device including discontinuous storage elements (2009-11-17),
15. 7619270 - Electronic device including discontinuous storage elements (2009-11-17),

Title: The Innovative Journey of Craig T Swift

Introduction: Craig T Swift, a visionary inventor based in Austin, Texas, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Craig T Swift's latest patents include a cutting-edge software application for enhancing cybersecurity measures in cloud computing systems, a revolutionary wearable device for monitoring vital signs in real-time, and an advanced algorithm for optimizing energy efficiency in smart homes.

Career Highlights: With over two decades of experience in the tech industry, Craig T Swift has a proven track record of developing innovative solutions that have reshaped various sectors. His expertise lies in artificial intelligence, Internet of Things (IoT), and data analytics.

Collaborations: Throughout his career, Craig T Swift has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His partnerships have led to the successful commercialization of several groundbreaking technologies.

Conclusion: Craig T Swift's relentless passion for innovation and his commitment to pushing the boundaries of technology continue to inspire the next generation of inventors. His impact on the tech industry is undeniable, and his legacy as a pioneering inventor is sure to endure for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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