The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Oct. 07, 2014
Freescale Semiconductor, Inc., Austin, TX (US);
Craig T. Swift, Austin, TX (US);
Asanga H. Perera, Austin, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A split gate memory device includes a semiconductor substrate and a select gate over the substrate. The select gate has a bottom portion and a top portion over the bottom portion, wherein the top portion has a top sidewall and the bottom portion has a bottom sidewall, and wherein the bottom sidewall extends beyond the top sidewall. The devices also includes a control gate adjacent the select gate, a charge storage layer located between the select gate and the control gate and between the control gate and the substrate, and an isolation region over the bottom portion of the select gate and between the top sidewall of the select gate and the charge storage layer. The bottom sidewall of the bottom portion extends to the charge storage layer.