The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Jul. 25, 2005
Michael A. Sadd, Austin, TX (US);
Ko-min Chang, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Cheong M. Hong, Austin, TX (US);
Craig T. Swift, Austin, TX (US);
Michael A. Sadd, Austin, TX (US);
Ko-Min Chang, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Cheong M. Hong, Austin, TX (US);
Craig T. Swift, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A process for forming an electronic device can include forming a trench within a substrate, wherein the trench includes a wall and a bottom. The process can also include including forming a portion of discontinuous storage elements that lie within the trench, and forming a first gate electrode within the trench after forming the discontinuous storage elements. At least one discontinuous storage element lies along the wall of the trench at an elevation between an upper surface of the first gate electrode and a primary surface of the substrate. The process can also include forming a second gate electrode overlying the first gate electrode and the primary surface of the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile