The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Oct. 25, 2002
Craig T. Swift, Austin, TX (US);
Frank K. Baker, Jr., Austin, TX (US);
Erwin J. Prinz, Austin, TX (US);
Paul A. Ingersoll, Austin, TX (US);
Craig T. Swift, Austin, TX (US);
Frank K. Baker, Jr., Austin, TX (US);
Erwin J. Prinz, Austin, TX (US);
Paul A. Ingersoll, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A non volatile memory includes a plurality of transistors having a non conductive storage medium. The transistors are erased by injecting holes into the storage medium from both the source edge region and drain edge region of the transistor. In one example, the storage medium is made from silicon nitride isolated from the underlying substrate and overlying gate by silicon dioxide. The injection of holes in the storage medium generates two hole distributions having overlapping portions. The combined distribution of the overlapping portions is above at least a level of the highest concentration of program charge in the overlap region of the storage medium. In one example, the transistors are programmed by hot carrier injection. In some examples, the sources of groups of transistors of the memory are decoded.