The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Nov. 04, 2005
Erwin J. Prinz, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Paul A. Ingersoll, Austin, TX (US);
Erwin J. Prinz, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Paul A. Ingersoll, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for making a multibit non-volatile memory cell structure is provided herein. In accordance with the method, a semiconductor substrate () is provided, and first and second sets of memory stacks (, and) are formed on the substrate, each memory stack including a control gate () and a layer of memory material (). A source/drain region () is then formed between the first and second sets of memory stacks, and a silicide layer () is formed over the source/drain region.