= 0.29 Inventors with similar research interests:
Years Active: 2013-2025
Title: The Innovative Mind of Patrick Robert Khayat
Introduction
Patrick Robert Khayat, based in San Diego, California, is a prolific inventor with an impressive portfolio of 117 patents. His innovations primarily focus on advancements in memory subsystems, showcasing his expertise in enhancing the performance and efficiency of memory devices.
Latest Patents
Among his latest patents is a groundbreaking invention titled "Temperature-compensated time estimate for a block to reach a uniform charge loss state." This invention involves a processing device that monitors the temperature of a memory block, determining the time frame for charge state normalization based on temperature conditions. Another notable patent, "Measurement of representative charge loss in a block to determine charge loss state," details a method for detecting charge loss levels across representative wordlines in a memory device to identify uniform charge loss states. These patents highlight Khayat's innovative approaches to improving memory subsystem technology.
Career Highlights
Throughout his career, Khayat has made significant contributions to the field of technology, particularly during his time with renowned companies such as Micron Technology Incorporated and STMicroelectronics GmbH. His work at these organizations has played a crucial role in developing advanced memory solutions that drive efficiency in todays digital landscape.
Collaborations
Khayat has collaborated with prominent coworkers, including Sivagnanam Parthasarathy and Mustafa Nazmi Kaynak. These partnerships have led to notable advancements in memory technology, showcasing the collaborative spirit of innovation within the industry.
Conclusion
Patrick Robert Khayat's contributions to the technology sector, marked by his extensive patent portfolio and collaborative work with industry leaders, underscore his standing as a key inventor in the field of memory subsystems. His latest inventions not only push the boundaries of current technology but also set the stage for future advancements in memory device design and functionality.
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