Micron Technology Incorporated

Stmicroelectronics Gmbh

Patrick Robert Khayat

Sivagnanam Parthasarathy

Mustafa Nazmi Kaynak

James Fitzpatrick

Abdelhakim Alhussien

AbdelHakim S Alhussien

Vamsi Pavan Rayaprolu

Sampath K Ratnam

Kishore Kumar Muchherla

Nicholas Julian Richardson

Steven Michael Kientz

Jeffrey S McNeil, Jr

Violante Moschiano

Robert B Eisenhuth

William Henry Radke

Larry Joseph Koudele

Dung Viet Nguyen

Shantilal Doru

Zixiang Loh

Michael Sheperek

Zhenlei Shen

Alessandro Risso

Aaron S Yip

Mark Alan Helm

Eric N Lee

Shane G Nowell

Sundararajan Sankaranarayanan

Jiangang Wu

Akira Goda

Jeremy Binfet

Christopher M Smitchger

Nagendra Prasad Ganesh Rao

Ka Leung Ling

Zhengang Chen

Jung Sheng Hoei

Jun Wan

Phong Sy Nguyen

Sead Zildzic

HyungSeok Kim

Hope Abigail Henry

Thomas Herbert Lentz

Larry K Koudele

Hyung Seok Kim

A memory device to search for a voltage optimized to read a group of memory cells. In response to a read command, the memory device measures first signal and noise characteristics of the memory cells by reading the memory cells at first test voltages. Based on the first signal and noise characteristics, the memory device may determine that the optimized read voltage is outside of a range of the first test voltages. In response, the memory device determines, based on the first signal and noise characteristics, an estimate of the optimized read voltage, and measures second signal and noise characteristics by reading at second test voltages configured around the estimate. The optimized read voltage can be computed based at least in part on the second signal and noise characteristics. The memory device retrieves data from the memory cells using the optimized read voltage.

Search for an optimized read voltage

Systems and methods are disclosed including a memory device comprising a memory array and control logic, operatively coupled with the memory array. The control logic can perform operations comprising causing a read operation to be initiated with respect to a set of target cells of the memory array; obtaining, for a respective group of adjacent cells, respective cell state information; performing a set of strobe reads on the set of target cells; and generating, for a target cell of the set of target cells, semi-soft bit data based on the respective cell state information of the respective group of adjacent cells and on data obtained from a first strobe read and a second strobe read of the set of strobe reads performed on the target cell.

Generating semi-soft bit data during corrective read operations in memory devices

A processing device in a memory sub-system detects an occurrence of a data integrity check trigger event and, responsive to the occurrence of the data integrity check trigger event, identifies a memory die of a plurality of memory dies. The processing device further associates each segment of the identified memory die with a respective group of a plurality of groups, each group representing one or more of a plurality of error mechanisms, and determines one or more respective adaptive scan frequencies for the identified memory die based on statistics of the segments associated with each respective group.

Adaptive integrity scan rates in a memory sub-system based on block health metrics

Described are systems and methods for memory read calibration based on memory device-originated metrics characterizing voltage distributions. An example memory device includes: a memory array having a plurality of memory cells and a controller coupled to the memory array. The controller is to perform operations including: receiving a first metric characterizing threshold voltage distributions of a subset of the plurality of memory cells; determining a first read voltage adjustment; receiving a second metric characterizing the threshold voltage distributions; determining a second read voltage adjustment; and applying the second read voltage adjustment for reading the subset of the plurality of memory cells.

Memory read calibration based on memory device-originated metrics characterizing voltage distributions

A system having a processing device operatively coupled with a memory device to perform the following operations: responsive to detecting a triggering event, measuring a temperature of the memory device to obtain a suspend temperature value, enabling a suspend temperature flag to indicate that temperature input for a step of an error handling operation is based on the suspend temperature value. Updating an operating temperature with the suspend temperature value. Determining, using a data structure which maps temperatures to read level offsets, a read level offset for the step of the error handling operation, based on the operating temperature. Causing the step of the error handling operation to be performed on a set of cells using a read level value based on the read level offset and a base read level, an disabling the suspend temperature flag.

Temperature sensor management during error handling operations in a memory sub-system

Described are systems and methods for memory read threshold tracking based on memory device-originated metrics characterizing voltage distributions. An example memory device includes: a memory array having a plurality of memory cells and a controller coupled to the memory array. The controller is to perform operations including: receiving a first value of a metric characterizing threshold voltage distributions of a subset of a set of the plurality of memory cells; determining a first voltage threshold adjustment value; receiving a second value of the metric; determining a second voltage threshold adjustment value; and applying the second voltage threshold adjustment value for reading the set of the plurality of memory cells.

Memory read voltage threshold tracking based on memory device-originated metrics characterizing voltage distributions

Embodiments disclosed can include selecting a target read window budget (RWB) increase and identifying a set of aggressor memory cells. They can also include generating a list of programming level states for the set of aggressor memory cells and identifying, in the list, an entry associated with a maximum RWB increase that is greater than or equal to the target RWB increase. They can further include responsive to identifying the entry with the total number of bits associated with a maximum RWB increase that is greater than or equal to the target RWB increase, modifying a parameter of the memory access operation with the adjustment associated with the identified entry.

Managing compensation for charge coupling and lateral migration in memory devices

Described are systems and methods for validating read level voltage in memory devices. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines; and a controller coupled to the memory array, the controller to perform operations comprising: causing a read level voltage to be applied to a specified wordline of the plurality of wordlines; receiving an actual bit count reflecting a number of memory cells that have their respective threshold voltages below the read level voltage; and responsive to determining that a difference of an expected bit count and the actual bit count exceeds a predetermined threshold value, adjusting the read level voltage.

Validating read level voltage in memory devices

A memory device to manage the assignment of offset voltages for read operations, and to adjust read voltages using the offset voltages. The offset voltages are dynamically adjusted by a controller during operation of the memory device in response to read errors. In one approach, a first bin of offset voltages is assigned to a first region of a storage media. The first offset voltages are used to adjust read voltages for reading a page of first memory cells in the first region. The controller determines that at least one error has occurred in reading the page. In response to determining the error, the controller determines second offset voltages that can be used to read the first memory cell without causing a read error. Based on the second offset voltages, the controller identifies third offset voltages for assigning to the first region. The third offset voltages are used for adjusting read voltages for subsequent reads of pages in the first region. The third offset voltages can be assigned from an existing offset voltage bin, or a new offset voltage bin can be generated for the assignment.

Dynamic adjustment of offset voltages for reading memory cells in a memory device

Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations comprising performing a data integrity check on a source set of memory cells, configured to store a first number of bits per memory cell, to obtain a data integrity metric value; responsive to determining that the data integrity metric value satisfies the threshold criterion, performing an error handling operation on the data stored on the source set of memory cells to generate corrected data; and causing the memory device to copy data the corrected data to a destination set of memory cells of the memory device, wherein the destination set of memory cells are configured to store a second number of bits per memory cell, wherein the second number of bits per memory cells is greater than the first number of bits per memory cell.

Memory compaction management in memory devices

A system can include a memory device and a processing device, operatively coupled with the memory device, to perform operations including reading a first copy of data stored in a first set of memory cells comprising a first memory cell, determining whether a threshold voltage of the first memory cell is within a first range of threshold voltages, responsive to determining that the threshold voltage of the first memory cell is within the first range of threshold voltages, reading a second copy of the data stored in a second set of memory cells comprising a second memory cell, determining whether a threshold voltage of the second memory cell is within a second range of threshold voltages, and responsive to determining that the threshold voltage of the second memory cell is outside the second range, using the second copy of the data.

Using duplicate data for improving error correction capability

A processing device in a memory sub-system monitors a temperature associated with a block of a memory device, the block comprising a plurality of wordlines. The processing device further determines a first amount of time between when memory cells associated with a first wordline of the plurality of wordlines of the block were written and when memory cells associated with a last wordline of the plurality of wordlines of the block were written. That first amount of time is normalized according to the temperature associated with the block. The processing device further determines, based at last in part on the first amount of time and on an associated scaling factor, an estimate of when the block will reach a uniform charge loss state.

Temperature-compensated time estimate for a block to reach a uniform charge loss state

A processing device in a memory sub-system detects an occurrence of a triggering event, determines respective levels of charge loss associated with a first representative wordline of a block of a memory device and with a second representative wordline of the block of the memory device, and determines whether a difference between the respective levels of charge loss satisfies a threshold criterion. Responsive to determining that the difference between the respective levels of charge loss satisfies the threshold criterion, the processing device further determines that the block is in a uniform charge loss state.

Measurement of representative charge loss in a block to determine charge loss state

A memory device to determine a voltage optimized to read a group of memory cells. In response to a command, the memory device reads the group of memory cells at a plurality of test voltages to determine a set of signal and noise characteristics of the group of memory cells. The memory device determines or recognizes a shape of a distribution of the signal and noise characteristics over the plurality of test voltages. Based on the shape, the memory device selects an operation in determining an optimized read voltage of the group of memory cells.

Determine optimized read voltage via identification of distribution shape of signal and noise characteristics

Embodiments disclosed can include determining, for each memory cell connected to each wordline, a respective value of a metric that reflects a sensitivity of a threshold voltage associated with the memory cell to a change in a threshold voltage of an adjacent cell and determining, for each wordline, based on the determined sensitivity for each memory cell, a respective aggregate measure of adjacent cell dependence. They can further include comparing the determined aggregate measure of adjacent cell dependence to a threshold dependence value. They can also include identifying a first wordline group having wordlines with high adjacent cell dependence and a second wordline group having wordlines with low adjacent cell dependence and storing a record referencing the wordlines of the second wordline group, the record indicating a corresponding location on the die of the memory device.

Managing error compensation using charge coupling and lateral migration sensitivity

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San Diego, CA, United States of America

Patrick Robert Khayat