The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Jan. 04, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

James Fitzpatrick, Laguna Niguel, CA (US);

Sivagnanam Parthasarathy, Carlsbad, CA (US);

Patrick Robert Khayat, San Diego, CA (US);

Abdelhakim S. Alhussien, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G06F 18/214 (2023.01); G06N 20/00 (2019.01); G11C 7/02 (2006.01); G11C 11/56 (2006.01); G11C 29/12 (2006.01); G11C 29/14 (2006.01); G11C 29/38 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G06F 18/214 (2023.01); G06N 20/00 (2019.01); G11C 7/02 (2013.01); G11C 29/12005 (2013.01); G11C 29/14 (2013.01); G11C 29/38 (2013.01);
Abstract

A memory device to determine a voltage window to read soft bit data. For example, in response to a read command, the memory device can read a group of memory cells at a plurality of test voltages to determine signal and noise characteristics, which can be used to determine an optimized read voltage for reading hard bit data and a voltage window between a first voltage and a second voltage for reading soft bit data. The soft bit data identifies exclusive or (XOR) of results read from the group of memory cells at the first voltage and at the second voltage respective. The memory device can provide a response to the read command based on the hard bit data and the soft bit data.


Find Patent Forward Citations

Fitzpatrick, James. (2026). Optimization of soft bit windows based on signal and noise characteristics of memory cells (U.S. Patent No. 12665022). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12665022

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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