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For the Inventor, By the Inventor

Dallas, TX, United States of America

Noel M Russell

This inventor holds 15 USPTO granted patents and 1 EPO patent. Top assignee: Texas Instruments Corporation. Active years: 1999-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Noel M Russell. Retrieved from https://idiyas.com/inventor/noel-m-russell

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15

% Patents Active = 100.0


Average Co-Inventor Count = 2.8

ph-index = 5

Forward Citations = 101(Granted Patents)


Location History:

  • Dallas, TX (US) (1999 - 2001)
  • Plano, TX (US) (2004 - 2010)

Company Filing History:

goldMedal15 out of 29,869 
 
Texas Instruments Corporation
 patents

Years Active: 1999-2010

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15 patents (USPTO):Explore Patents
1. 7803703 - Metal-germanium physical vapor deposition for semiconductor device defect reduction (2010-09-28),
2. 7674707 - Manufacturable reliable diffusion-barrier (2010-03-09),
3. 7435672 - Metal-germanium physical vapor deposition for semiconductor device defect reduction (2008-10-14),
4. 7256121 - Contact resistance reduction by new barrier stack process (2007-08-14),
5. 7208398 - Metal-halogen physical vapor deposition for semiconductor device defect reduction (2007-04-24),
6. 7148140 - Partial plate anneal plate process for deposition of conductive fill material (2006-12-12),
7. 7037837 - Method of fabricating robust nucleation/seed layers for subsequent deposition/fill of metallization layers (2006-05-02),
8. 6900127 - Multilayer integrated circuit copper plateable barriers (2005-05-31),
9. 6864108 - Measurement of wafer temperature in semiconductor processing chambers (2005-03-08),
10. 6723636 - Methods for forming multiple damascene layers (2004-04-20),
11. 6720255 - Semiconductor device with silicon-carbon-oxygen dielectric having improved metal barrier adhesion and method of forming the device (2004-04-13),
12. 6693357 - Methods and semiconductor devices with wiring layer fill structures to improve planarization uniformity (2004-02-17),
13. 6291347 - Method and system for constructing semiconductor devices (2001-09-18),
14. 6235631 - Method for forming titanium aluminum nitride layers (2001-05-22),
15. 5981382 - PVD deposition process for CVD aluminum liner processing (1999-11-09),

Title: Innovations of Inventor Noel M Russell

Introduction

Noel M Russell is a prominent inventor based in Dallas, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on improving manufacturing processes and device reliability in the semiconductor industry.

Latest Patents

One of his latest patents is titled "Metal-germanium physical vapor deposition for semiconductor device defect reduction." This invention provides a method for manufacturing a metal silicide electrode for semiconductor devices. The process involves depositing germanium and transition metal atoms through physical vapor deposition to create a metal-germanium alloy layer on a semiconductor substrate. This alloy layer is then reacted with the substrate to form a metal silicide electrode.

Another notable patent is for a "Manufacturable reliable diffusion-barrier." This invention presents devices and methods for fabricating diffusion barrier layers on a substrate. The process allows for the formation of nitride layers of less than <1 nm, while enabling the creation of a pure metal layer on the nitride layer without the need for re-igniting the plasma. This innovation ensures controlled thickness of the nitride layer, enhancing the reliability of semiconductor devices.

Career Highlights

Noel M Russell is currently associated with Texas Instruments Corporation, where he continues to innovate and contribute to advancements in semiconductor technology. His expertise and inventions have played a crucial role in enhancing the performance and reliability of electronic devices.

Collaborations

Throughout his career, Noel has collaborated with notable colleagues, including Stephan Grunow and Satyavolu Srinivas Papa Rao. These collaborations have further enriched his work and contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Noel M Russell's contributions to semiconductor technology through his innovative patents and collaborations highlight his significant impact on the industry. His work continues to pave the way for advancements in electronic devices and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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