The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2004
Filed:
Dec. 12, 2002
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method ( ) of fabricating an electronic device ( ) formed on a semiconductor wafer. The method forms a dielectric layer ( ) in a fixed position relative to the wafer, where the dielectric layer comprises an atomic concentration of each of silicon, carbon, and oxygen. After the forming step, the method exposes ( ) the electronic device to a plasma such that the atomic concentration of carbon in a portion of the dielectric layer is increased and the atomic concentration of oxygen in a portion of the dielectric layer is decreased. After the exposing step, the method forms a barrier layer ( ) adjacent at least a portion of the dielectric layer.