The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Jul. 30, 2004
Peijun J. Chen, Dallas, TX (US);
Duofeng Yue, Plano, TX (US);
Douglas E. Mercer, Richardson, TX (US);
Noel Russell, Plano, TX (US);
Peijun J. Chen, Dallas, TX (US);
Duofeng Yue, Plano, TX (US);
Douglas E. Mercer, Richardson, TX (US);
Noel Russell, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method of manufacturing a metal silicide electrode () for a semiconductor device (). The method comprises depositing by physical vapor deposition, halogen atoms () and transition metal atoms () to form a halogen-containing metal layer () on a semiconductor substrate (). The halogen-containing metal layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit () comprising the metal silicide electrode.