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For the Inventor, By the Inventor

Saratoga Springs, NY, United States of America

Nigel Graeme Cave

USPTO Granted Patents = 17 

Average Co-Inventor Count = 5.6

ph-index = 5

Forward Citations = 98(Granted Patents)


Location History:

  • Saratoga Springs, NM (US) (2019)
  • Saratoga Springs, NY (US) (2018 - 2021)

Company Filing History:

goldMedal15 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal1 out of 164,197 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 941 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2018-2021

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17 patents (USPTO):Explore Patents
1. 11101348 - Nanosheet field effect transistor with spacers between sheets (2021-08-24),
2. 11024536 - Contact interlayer dielectric replacement with improved SAC cap retention (2021-06-01),
3. 10734525 - Gate-all-around transistor with spacer support and methods of forming same (2020-08-04),
4. 10504790 - Methods of forming conductive spacers for gate contacts and the resulting device (2019-12-10),
5. 10468300 - Contacting source and drain of a transistor device (2019-11-05),
6. 10411010 - Tall single-fin FIN-type field effect transistor structures and methods (2019-09-10),
7. 10381459 - Transistors with H-shaped or U-shaped channels and method for forming the same (2019-08-13),
8. 10290549 - Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same (2019-05-14),
9. 10249728 - Air-gap gate sidewall spacer and method (2019-04-02),
10. 10249535 - Forming TS cut for zero or negative TS extension and resulting device (2019-04-02),
11. 10236218 - Methods, apparatus and system for forming wrap-around contact with dual silicide (2019-03-19),
12. 10211100 - Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor (2019-02-19),
13. 10204994 - Methods of forming a semiconductor device with a gate contact positioned above the active region (2019-02-12),
14. 10026824 - Air-gap gate sidewall spacer and method (2018-07-17),
15. 9978608 - Fin patterning for a fin-type field-effect transistor (2018-05-22),

Title: The Innovative Journey of Nigel Graeme Cave

Introduction: Nigel Graeme Cave, a distinguished inventor hailing from Saratoga Springs, NY, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Nigel Graeme Cave's latest patents include cutting-edge advancements in artificial intelligence, renewable energy solutions, and sustainable materials.

Career Highlights: With a career spanning over two decades, Nigel Graeme Cave has been at the forefront of technological advancements, holding key positions in renowned tech companies and research institutions.

Collaborations: Throughout his career, Nigel Graeme Cave has collaborated with leading scientists, engineers, and researchers from around the globe, fostering a culture of innovation and excellence in all his projects.

Conclusion: Nigel Graeme Cave's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventions.

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