The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Jul. 05, 2017
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Niskayuna, NY (US);
Andre Labonte, Mechanicville, NY (US);
Lars Liebmann, Mechanicville, NY (US);
Daniel Chanemougame, Niskayuna, NY (US);
Chanro Park, Clifton Park, NY (US);
Nigel Cave, Saratoga Springs, NY (US);
Vimal Kamineni, Mechanicville, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method of manufacturing a semiconductor device is provided including forming raised source and drain regions on a semiconductor layer, forming a first insulating layer over the semiconductor layer, forming a first contact to one of the source and drain regions in the first insulating layer, forming a second insulating layer over the first contact, forming a trench in the second insulating layer to expose the first contact, removing a portion of the first contact below the trench, thereby forming a recessed surface of the first contact, removing a portion of the first insulating layer, thereby forming a recess in the trench and exposing a portion of a sidewall of the first contact below the recessed surface of the first contact, and filling the trench and the recess formed in the trench with a contact material to form a second contact in contact with the first contact.