The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Jul. 25, 2018
Globalfoundries U.s. Inc., Malta, NY (US);
Ruilong Xie, Schenectady, NY (US);
Julien Frougier, Albany, NY (US);
Nigel G. Cave, Saratoga Springs, NY (US);
Steven R. Soss, Cornwall, NY (US);
Daniel Chanemougame, Niskayuna, NY (US);
Steven Bentley, Menands, NY (US);
Rohit Galatage, Renesslaer, NY (US);
Bum Ki Moon, Niskayuna, NY (US);
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Abstract
Methods form devices by creating openings in sacrificial gates between nanosheet stacks (alternating layers of a first material and channel structures), forming spacers in the openings, and removing the sacrificial gates to leave the spacers. The first material is then removed from between the channel structures. A first work function metal is formed around and between the channel structures. Next, first stacks (of the stacks) are protected with a mask to leave second stacks (of the stacks) exposed. Then, the first work function metal is removed from the second stacks while the first stacks are protected by the mask and the spacers. Subsequently, a second work function metal is formed around and between the channel structures of the second stacks. A gate material is then formed over the first work function metal and the second work function metal.