Bum Ki Moon

Title: Bum Ki Moon: Innovator in Nanosheet Technology

Introduction

Bum Ki Moon is a notable inventor based in Niskayuna, NY (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on nanosheet field effect transistors.

Latest Patents

Bum Ki Moon holds a patent for a "Nanosheet field effect transistor with spacers between sheets." This invention involves methods for forming devices by creating openings in sacrificial gates between nanosheet stacks, which consist of alternating layers of a first material and channel structures. The process includes forming spacers in the openings and removing the sacrificial gates to leave the spacers intact. Subsequently, the first material is removed from between the channel structures, and a first work function metal is formed around and between these structures. The invention further details the protection of first stacks with a mask while exposing second stacks, allowing for the selective removal of the first work function metal. Finally, a second work function metal is formed around and between the channel structures of the second stacks, culminating in the formation of a gate material over both work function metals.

Career Highlights

Bum Ki Moon is currently employed at GlobalFoundries U.S. Inc., where he continues to advance semiconductor technologies. His work has been instrumental in developing more efficient and effective transistor designs, which are crucial for modern electronic devices.

Collaborations

Bum Ki Moon collaborates with talented colleagues, including Ruilong Xie and Julien Frougier. Their combined expertise contributes to the innovative environment at GlobalFoundries.

Conclusion

Bum Ki Moon's contributions to nanosheet technology and his patent on field effect transistors highlight his role as a key innovator in the semiconductor industry. His work continues to influence advancements in electronic device performance and efficiency.