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For the Inventor, By the Inventor

Meridian, ID, United States of America

Nevil N Gajera

USPTO Granted Patents = 61 

 

Average Co-Inventor Count = 3.7

ph-index = 5

Forward Citations = 124(Granted Patents)

Forward Citations (Not Self Cited) = 84(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Boise, ID (US) (2009 - 2024)
  • Meridian, ID (US) (2017 - 2024)

Company Filing History:

goldMedal53 out of 38,002 
 
Micron Technology Incorporated
 patents
silverMedal8 out of 54,780 
 
Intel Corporation
 patents

Years Active: 2009-2025

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Areas of Expertise:
DRAM Device Failures
Data Correction Scheme
Memory Cell Read Operations
Shadow DRAM Architecture
Instant Write Scheme
Multi-Level Memory Cells
Dynamic Read Voltage Techniques
Three-Dimensional Memory Arrays
Weighted Wear Leveling
Bipolar Read Retry
Adaptive Programming
Conditional Drift Cancellation
61 patents (USPTO):Explore Patents
1. 12316349 - Iterative decoding technique for correcting DRAM device failures (2025-05-27),
2. 12210413 - Data correction scheme with reduced device overhead (2025-01-28),
3. 12176029 - Drift aware read operations (2024-12-24),
4. 12170531 - Iterative decoder for correcting dram device failures (2024-12-17),
5. 12106803 - Multi-step pre-read for write operations in memory devices (2024-10-01),
6. 12094533 - Memory cell read operation techniques (2024-09-17),
7. 12080359 - Identify the programming mode of memory cells during reading of the memory cells (2024-09-03),
8. 12032443 - Shadow DRAM with CRC+RAID architecture, system and method for high RAS feature in a CXL drive (2024-07-09),
9. 12019516 - Instant write scheme with delayed parity/raid (2024-06-25),
10. 12014784 - Evaluation of background leakage to select write voltage in memory devices (2024-06-18),
11. 12013756 - Method and memory system for writing data to dram submodules based on the data traffic demand (2024-06-18),
12. 11962327 - Iterative decoding technique for correcting DRAM device failures (2024-04-16),
13. 11942139 - Performing refresh operations on memory cells (2024-03-26),
14. 11923007 - Dirty write on power off (2024-03-05),
15. 11894078 - Accessing a multi-level memory cell (2024-02-06),

Title: The Innovative Journey of Nevil N Gajera

Introduction: Nevil N Gajera, a talented inventor based in Meridian, ID (US), has made significant contributions to the field of innovations with his creative mindset and dedication to problem-solving.

Latest Patents: Nevil N Gajera holds several patents in various industries, showcasing his versatility and ingenuity in inventing new solutions to existing challenges. His recent patents focus on cutting-edge technologies that aim to improve efficiency and enhance user experiences.

Career Highlights: Throughout his career, Nevil N Gajera has demonstrated a keen ability to identify gaps in the market and develop innovative solutions to fill them. His passion for creating impactful inventions has led to the successful commercialization of several products that have positively impacted industries.

Collaborations: Nevil N Gajera has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His collaborative spirit and willingness to work with experts from diverse fields have enriched his projects and accelerated their development and implementation.

Conclusion: In conclusion, Nevil N Gajera's journey as an inventor is marked by a relentless pursuit of innovation and a commitment to pushing the boundaries of what is possible. His contributions to the world of inventions continue to inspire and pave the way for future innovators to follow in his footsteps.

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