Nima Mokhlesi

Title: Nima Mokhlesi: A Pioneer in Nonvolatile Memory Programming

Introduction:

Nima Mokhlesi, a prolific inventor and expert in the field of nonvolatile memory programming, is based in Los Gatos, CA (US). With an impressive track record of 176 patents, Mokhlesi has made significant contributions to the advancement of memory technologies. This article explores his latest patents, career highlights, collaborations, and remarkable achievements in the field.

Latest Patents:

Mokhlesi's recent patents showcase his expertise in programming nonvolatile memory and three-dimensional stacked memory devices. In one of his latest patents, titled "Programming of nonvolatile memory with verify level dependent on memory state and programming loop count," Mokhlesi introduces a novel method using a series of programming pulses to program memory cells in parallel. The unique aspect of this technique lies in the adjustability of the verify level, compensating for variations in sensing and source line loading during the programming process.

Another groundbreaking patent, "Three-dimensional non-volatile memory with separate source lines," describes a three-dimensional stacked nonvolatile memory device. Mokhlesi's invention features separate source lines connected to different subsets of NAND strings, enhancing concurrent verification of multiple data states. This architecture enables sequential reading and simultaneous programming of memory cells to lower data states, employing specific voltages applied to source lines and bit lines.

Career Highlights:

Throughout his career, Nima Mokhlesi has pursued innovation in the memory industry. Notably, he has contributed significantly to Sandisk Technologies Inc. and Sandisk 3D LLC, two prominent companies specializing in memory technologies. His dedication and expertise have been instrumental in advancing nonvolatile memory programming techniques, shaping the future of memory development.

Collaborations:

Mokhlesi's success is not only attributed to his individual brilliance but also to fruitful collaborations with industry professionals. He has had the opportunity to work alongside talented and like-minded individuals, including Yupin Fong and Daniel C Guterman, who have contributed to the progress of nonvolatile memory programming. These collaborations have played a critical role in unlocking new possibilities and pushing the boundaries of memory technology.

Conclusion:

Nima Mokhlesi has made a remarkable impact in the field of nonvolatile memory programming, as evidenced by his extensive patent portfolio. His latest patents showcase his expertise in programming techniques and innovative memory device architectures, highlighting his commitment to advancing the memory industry. Collaborations with accomplished professionals further underscore his dedication to driving innovation in this domain. With his pioneering contributions, Mokhlesi continues to shape the future of memory technologies and solidify his position as a leading inventor in the field.