The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Jan. 17, 2013
Applicant:
Sandisk Tecnologies Inc., Milpitas, CA (US);
Inventor:
Nima Mokhlesi, Los Altos, CA (US);
Assignee:
SANDISK TECNOLOGIES INC., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/3454 (2013.01); G11C 11/5642 (2013.01); G11C 16/28 (2013.01); G11C 16/3459 (2013.01);
Abstract
A system and methods to find the threshold voltage distribution across a set of nonvolatile memory cells, such that embodiments may incorporate this distribution information into calculations that may change the read compare voltages used to read the memory cells, while ensuring adequate separation in read voltage between different data states at which the memory cells may be read.
Quick Actions:
Mokhlesi, Nima. (2015). Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution (U.S. Patent No. 9076545). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9076545
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile