The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2015

Filed:

Jul. 29, 2013
Applicant:

Sandisk IL Ltd., Kfar Saba, IL;

Inventors:

Idan Alrod, Herzliya, IL;

Eron Sharon, Rishon Lezion, IL;

Toru Miwa, Yokohama, JP;

Gerrit Jan Hemink, Yokohama, JP;

Nima Mokhlesi, Los Gatos, CA (US);

Assignee:

SANDISK IL LTD, Kfar Saba, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/34 (2006.01); G06F 11/10 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/34 (2013.01); G06F 11/1072 (2013.01); G11C 11/5642 (2013.01); G11C 16/26 (2013.01); G11C 16/3422 (2013.01); G11C 16/3427 (2013.01); G11C 29/00 (2013.01);
Abstract

A non-volatile memory has its cells' thresholds programmed within any one of a first set of voltage bands partitioned by a first set of reference thresholds across a threshold window. Hard bits are obtained when read relative to the first set of reference thresholds. The cells are read at a higher resolution relative to a second set of reference thresholds so as to provide additional soft bits for error correction. The soft bits are generated by a combination of a first modulation of voltage on a current word line WLn and a second modulation of voltage on an adjacent word line WLn+1, as in a reading scheme known as 'Direct-Lookahead (DLA)'.


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