The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2017

Filed:

May. 21, 2014
Applicant:

Sandisk IL Ltd., Kfar Saba, IL;

Inventors:

Eran Sharon, Rishon Lezion, IL;

Yan Li, Milpitas, CA (US);

Nima Mokhlesi, Los Gatos, CA (US);

Assignee:

SanDisk IL Ltd., Kfar Saba, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2005.12); G11C 16/06 (2005.12); G11C 11/56 (2005.12); G11C 16/34 (2005.12);
U.S. Cl.
CPC ...
G11C 11/5642 (2012.12); G11C 16/0483 (2012.12); G11C 16/3454 (2012.12); G11C 16/3459 (2012.12); G11C 2211/5624 (2012.12); G11C 2211/5631 (2012.12);
Abstract

Methods and devices for simultaneously verifying or reading multiple states in non-volatile storage are disclosed. Methods and devices for efficiently reducing or eliminating cross-coupling effects in non-volatile storage are disclosed. Methods and devices for efficiently performing reads at a number of voltages to search for the threshold voltage of a memory cell are disclosed. Memory cells on different NAND strings that are read at the same time may be tested for different threshold voltage levels. Memory cells may be tested for different threshold voltages by applying different gate-to-source voltages to memory cells being tested for different threshold voltages. Memory cells may be tested for different threshold voltages by applying different drain to source voltages to the memory cells. Different amounts of compensation for cross-coupling affects may be applied to memory cells on different NAND strings that are read or programmed at the same time.


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