The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Jul. 29, 2022
Micron Technology, Inc., Boise, ID (US);
Riccardo Muzzetto, Arcore, IT;
Francesco Mastroianni, Melzo, IT;
Ferdinando Bedeschi, Biassono, IT;
Nevil N. Gajera, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for memory cell read operation techniques are described. A memory device may determine a starting voltage for a second phase of a read operation for a set of memory cells which may have a different magnitude than a magnitude of a starting voltage of a first phase of the read operation. For example, the memory device may use an ending voltage of the first phase to determine the starting voltage for the second phase. In some cases, the starting voltage for the second phase may correspond to a difference of a voltage offset and the ending voltage of the first phase. As part of the second phase of the read operation, the memory device may apply a sequence of voltages to the set of memory cells in accordance with the determined starting voltage of the second phase.