The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Mar. 24, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Karthik Sarpatwari, Boise, ID (US);

Fabio Pellizzer, Boise, ID (US);

Nevil N. Gajera, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01);
Abstract

Systems, methods and apparatus to determine a programming mode of a set of memory cells that store an indicator of the programming mode. In response to a command to read the memory cells in a memory device, a first read voltage is applied to the memory cells to identify a first subset of the memory cells that become conductive under the first read voltage. The determination of the first subset is configured as an operation common to different programming modes. Based on whether the first subset of the memory cell includes one or more predefined memory cells, the memory device determines a programming mode of memory cells. Once the programming mode is identified from the common operation, the memory device can further execute the command to determine a data item stored, via the programming mode, in the memory cells.


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