Mu-Yi Liu

This inventor holds 20 USPTO granted patents, primarily in Semiconductor Memory. Top assignee: Macronix International Co., Ltd.. Active years: 2003-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mu-Yi Liu. Retrieved from https://idiyas.com/inventor/mu-yi-liu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 20

% Patents Active = 85.0

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 74(Granted Patents)

Location History:

Taichung, TW (2003 - 2011)
Hsinchu, TW (2004 - 2014)

Company Filing History:

20 out of 3,609

Macronix International Co., Ltd.

patents

Years Active: 2003-2014

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Areas of Expertise:

LDMOS Device

Flash Memory

Non-Volatile Memory

Memory Cell Structure

Fabrication Method

Mask ROM

Programming Method

Chalcogenide Memory

High Stress Material

Insulating Members

Memory Device Testing

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8729635 - Semiconductor device having a high stress material layer (2014-05-20),

2. 7875938 - LDMOS device with multiple gate insulating members (2011-01-25),

3. 7473625 - LDMOS device and method of fabrication (2009-01-06),

4. 7471564 - Trapping storage flash memory cell structure with inversion source and drain regions (2008-12-30),

5. 7382654 - Trapping storage flash memory cell structure with inversion source and drain regions (2008-06-03),

6. 7348625 - Semiconductor device and method of manufacturing the same (2008-03-25),

7. 7192834 - LDMOS device and method of fabrication of LDMOS device (2007-03-20),

8. 7002849 - Method for programming and erasing non-volatile memory with nitride tunneling layer (2006-02-21),

9. 6919607 - Structure of two-bit mask read-only memory device and fabricating method thereof (2005-07-19),

10. 6917073 - ONO flash memory array for improving a disturbance between adjacent memory cells (2005-07-12),

11. 6838691 - Chalcogenide memory and method of manufacturing the same (2005-01-04),

12. 6834013 - Method for programming and erasing non-volatile memory with nitride tunneling layer (2004-12-21),

13. 6790730 - Fabrication method for mask read only memory device (2004-09-14),

14. 6713821 - Structure of a mask ROM device (2004-03-30),

15. 6709921 - Fabrication method for a flash memory device with a split floating gate and a structure thereof (2004-03-23),

Title: Innovator Spotlight: Mu-Yi Liu

Introduction

Mu-Yi Liu is a prominent inventor based in Taichung, Taiwan. With an impressive portfolio of 20 patents, he has made significant contributions to the field of semiconductor technology. Liu's innovations focus on enhancing device performance and efficiency, showcasing his commitment to advancing modern electronics.

Latest Patents

Liu's recent patents include cutting-edge technologies in semiconductor devices. One patent details a "Semiconductor device having a high stress material layer." This invention encompasses a substrate, a stacked gate structure, and doped regions with high stress material layers, all designed to enhance the mobility of carriers, thereby accelerating the operating speed of the device.

Another notable patent is for an "LDMOS device with multiple gate insulating members." This technology presents a substrate configured with source and drain regions, featuring an insulating layer that facilitates a flat current path. This innovation aims to reduce on-resistance while ensuring a high breakdown voltage, marking a significant advancement in LDMOS device fabrication.

Career Highlights

Mu-Yi Liu is currently associated with Macronix International Co., Ltd., where he leverages his expertise to innovate and develop advanced semiconductor solutions. His role at the company has positioned him as a key player in the semiconductor industry, contributing valuable insights and pioneering technologies that enhance device performance.

Collaborations

Liu collaborates with talented peers within his company, including notable figures such as Tao-Cheng Lu and Tso-Hung Fan. Their joint efforts and shared vision contribute to the continued success and innovation within Macronix International Co., Ltd. Together, they explore new frontiers in semiconductor technology that promise to shape the future of electronics.

Conclusion

With a solid foundation in semiconductor technology and a continuous drive for innovation, Mu-Yi Liu exemplifies the spirit of modern inventors. His contributions not only enhance the capabilities of semiconductor devices but also inspire future generations of engineers and inventors. As technology continues to evolve, Liu's work will remain influential in the quest for faster, more efficient electronic devices.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]